Antiferromagnet thickness dependence and rotatable spins in exchange biased CoO/Fe films

Effect of anisotropy on the critical antiferromagnet thickness in exchange-biased bilayers

M. S. Lund, W. A. A. Macedo,* Kai Liu, J. Nogués, Ivan K. Schuller, and C. Leighton Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minnesota 55455 Physics Department, University of California–San Diego, La Jolla, California 92093-0319 Department of Physics, University of California–Davis, California 95616 Institució Cata...

Thickness-dependent coercive mechanisms in exchange-biased bilayers

C. Leighton,1 M. R. Fitzsimmons,2 A. Hoffmann,3 J. Dura,4 C. F. Majkrzak,4 M. S. Lund,1 and Ivan K. Schuller5 1Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 2Los Alamos National Laboratory, Los Alamos, New Mexico 87545 3Argonne National Laboratory, Materials Science Division, 9700 S. Cass Avenue, Argonne, Illinois 60439 4National...

Competing anisotropies in exchange-biased nanostructured thin films

The magnetic anisotropies of a patterned, exchange biased Fe50Mn50/Ni80Fe20 system are studied using ferromagnetic resonance, supplemented by Brillouin light scattering experiments and Kerr magnetometry. The exchange biased bilayer is partially etched into an antidot geometry so that the system approximates a Ni80Fe20 layer in contact with antidot structured Fe50Mn50. Brillouin light scattering...

Thickness dependence of magnetic blocking in granular thin films

A study on the dependence of DC electrical properties and nanostructure of Cu thin films on film thickness

This paper reports the correlation between film thickness, nanostructure and DC electrical properties of copper thin films deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. Resistivity was measured by four point probe instrument, while a Hall effects measurement system w...